Background
Oxidation followed by oxide removal smooths silicon nanowires and changes their electrical and light-response behavior. Improved forward and leakage-current characteristics come with reduced photocurrent.
What the study found
Oxidation followed by oxide removal smooths silicon nanowires and changes the current through their junctions.
The study links improvements in forward-current and leakage behaviour to reduced surface roughness and defects.
Questions and limits
Photocurrent decreases after smoothing. The electrical improvements therefore do not establish an improvement in every aspect of photodetection.
How to compare the results
Compare wire diameter, absorbing volume, illumination, junction area, and bias voltage.
Related reading
Metal-Assisted Chemical Etching of Silicon: A Review
The related review’s abstract describes how metals, etchants and substrates affect etching. It helps separate the initial fabrication conditions from the post-treatment studied here.
The review does not independently validate the charge-transport mechanism proposed for this treatment.
Abstract-based introductionSources used in this summary
This summary draws on the main text and original figures. The complete supplementary materials and underlying data have not been independently reviewed.